Name: G2R1000MT33J
Brand: GeneSiC Semiconductor
SKU: 1242-G2R1000MT33J-ND
Price: 471.0651 CZK
Availability: OutOfStock

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G2R1000MT33J
DigiKey Part Number	1242-G2R1000MT33J-ND
Manufacturer	GeneSiC Semiconductor
Manufacturer Product Number	G2R1000MT33J
Description	SIC MOSFET N-CH 4A TO263-7
Manufacturer Standard Lead Time	20 Weeks
Customer Reference
Detailed Description	N-Channel 3300 V 4A (Tc) 74W (Tc) Surface Mount TO-263-7
Datasheet	Datasheet
EDA/CAD Models	G2R1000MT33J Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	GeneSiC Semiconductor
Series	G2R™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	3300 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id	3.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 20 V
Vgs (Max)	+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds	238 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	74W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-263-7
Package / Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number	G2R1000

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