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Trench MOS Barrier Schottky Rectifiers Slide 3

A new series of 100 V rectifiers have been developed using a proprietary TMBS structure to address the previously mentioned weaknesses of the traditional planar Schottky rectifier. The multi-cell structure of the device is illustrated in this figure. The depletion regions that result from the trench MOS barrier structure diminish minority carrier injections to the drift region; hence, the stored charges are minimized under switching conditions. This improves switching speed, especially under high working temperatures and high current conditions. The Schottky diode’s interface leakage current is also reduced by the depletion region’s electric field.

PTM Published on: 2011-11-08