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N-Channel 650 V 7A (Tc) 30W Through Hole TO-220SIS
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
N-Channel 650 V 7A (Tc) 30W Through Hole TO-220SIS
TO-220-3 Full Pack

TK560A65Y,S4X

DigiKey Part Number
TK560A65YS4X-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK560A65Y,S4X
Description
MOSFET N-CH 650V 7A TO220SIS
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 7A (Tc) 30W Through Hole TO-220SIS
Datasheet
 Datasheet
EDA/CAD Models
TK560A65Y,S4X Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSV
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
560mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs
14.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
380 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
30W
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
TK560A65
Product Questions and Answers

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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
154,73000 Kč54,73 Kč
5026,98180 Kč1 349,09 Kč
10024,27910 Kč2 427,91 Kč
50019,53862 Kč9 769,31 Kč
1 00018,01543 Kč18 015,43 Kč
2 00016,73475 Kč33 469,50 Kč
5 00016,55056 Kč82 752,80 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:54,73000 Kč
Unit Price with VAT:66,22330 Kč