Name: SCTWA90N65G2V-4
Brand: STMicroelectronics
SKU: 497-SCTWA90N65G2V-4-ND
Price: 713.537 CZK
Availability: OutOfStock

SCTWA90N65G2V-4 is out of stock and can be placed on backorder.

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SCTWA90N65G2V-4
DigiKey Part Number	497-SCTWA90N65G2V-4-ND
Manufacturer	STMicroelectronics
Manufacturer Product Number	SCTWA90N65G2V-4
Description	TRANS SJT N-CH 650V 119A HIP247
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads
Datasheet	Datasheet
EDA/CAD Models	SCTWA90N65G2V-4 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	STMicroelectronics
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	119A (Tc)
Rds On (Max) @ Id, Vgs	24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	157 nC @ 18 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3380 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	565W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	HiP247™ Long Leads
Package / Case	TO-247-3
Base Product Number	SCTWA90