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N-Channel 650 V 94.3A (Tc) 333W (Tc) Through Hole TO-247-4
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N-Channel 650 V 94.3A (Tc) 333W (Tc) Through Hole TO-247-4
TO-247-4

NTH4L016N065M3S

DigiKey Part Number
5556-NTH4L016N065M3S-ND
Manufacturer
onsemi
Manufacturer Product Number
NTH4L016N065M3S
Description
ELITESIC, 12 MOHM SIC M3S MOSFET
Manufacturer Standard Lead Time
23 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 94.3A (Tc) 333W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
94.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
16.2mOhm @ 30A, 18V
Vgs(th) (Max) @ Id
2.64V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
98.4 nC @ 18 V
Vgs (Max)
+18V, -3V
Input Capacitance (Ciss) (Max) @ Vds
2494 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
333W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
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In-Stock: 448
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1331,35000 Kč331,35 Kč
30203,90467 Kč6 117,14 Kč
120175,99825 Kč21 119,79 Kč
510174,98416 Kč89 241,92 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:331,35000 Kč
Unit Price with VAT:400,93350 Kč
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