GAN063-650WSAQ Nexperia USA Inc. | Discrete Semiconductor Products

GAN063-650WSAQ is Obsolete and no longer manufactured.

Available Substitutes:

MFR Recommended

Nexperia USA Inc.

In Stock: 304

Unit Price: 362,23000 Kč

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

GAN063-650WSAQ
DigiKey Part Number	1727-GAN063-650WSAQ-ND
Manufacturer	Nexperia USA Inc.
Manufacturer Product Number	GAN063-650WSAQ
Description	GANFET N-CH 650V 34.5A TO247-3
Customer Reference
Detailed Description	N-Channel 650 V 34.5A (Tc) 143W (Tc) Through Hole TO-247-3
Datasheet	Datasheet
EDA/CAD Models	GAN063-650WSAQ Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Nexperia USA Inc.
Series	-
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	34.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	143W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
Base Product Number	GAN063