TO-3P
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IXTQ30N60L2

DigiKey Part Number
IXTQ30N60L2-ND
Manufacturer
IXYS
Manufacturer Product Number
IXTQ30N60L2
Description
MOSFET N-CH 600V 30A TO3P
Manufacturer Standard Lead Time
38 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 30A (Tc) 540W (Tc) Through Hole TO-3P
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
Linear L2™
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
240mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
335 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
540W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
IXTQ30
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1407,43000 Kč407,43 Kč
30251,45267 Kč7 543,58 Kč
120232,71275 Kč27 925,53 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:407,43000 Kč
Unit Price with VAT:492,99030 Kč
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