Name: IXTA1N200P3HV
Brand: IXYS
SKU: IXTA1N200P3HV-ND
Price: 317.0926 CZK
Availability: OutOfStock

IXTA1N200P3HV is out of stock and can be placed on backorder.

Available Substitutes:

Parametric Equivalent

IXYS

In Stock: 823

Unit Price: 262,06000 Kč

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IXTA1N200P3HV
DigiKey Part Number	IXTA1N200P3HV-ND
Manufacturer	IXYS
Manufacturer Product Number	IXTA1N200P3HV
Description	MOSFET N-CH 2000V 1A TO263
Manufacturer Standard Lead Time	48 Weeks
Customer Reference
Detailed Description	N-Channel 2000 V 1A (Tc) 125W (Tc) Surface Mount TO-263AA
Datasheet	Datasheet
EDA/CAD Models	IXTA1N200P3HV Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4V @ 250µA
Mfr IXYS	Gate Charge (Qg) (Max) @ Vgs 23.5 nC @ 10 V
Series Polar P3™	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 25 V
Part Status Active	Power Dissipation (Max) 125W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 2000 V	Supplier Device Package TO-263AA
Current - Continuous Drain (Id) @ 25°C 1A (Tc)	Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IXTA1
Rds On (Max) @ Id, Vgs 40Ohm @ 500mA, 10V

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Substitutes (1)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
IXTA1N200P3HV-TRL	IXYS	823	238-IXTA1N200P3HV-TRLCT-ND	262,06000 Kč	Parametric Equivalent

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Unit Price without VAT:	262,06000 Kč
Unit Price with VAT:	317,09260 Kč

IXTA1N200P3HV