N-Channel 650 V 35A (Tc) 133W (Tc) Through Hole PG-TO247-4-3
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IMZA65R057M1HXKSA1

DigiKey Part Number
448-IMZA65R057M1HXKSA1-ND
Manufacturer
Manufacturer Product Number
IMZA65R057M1HXKSA1
Description
SILICON CARBIDE MOSFET, PG-TO247
Customer Reference
Detailed Description
N-Channel 650 V 35A (Tc) 133W (Tc) Through Hole PG-TO247-4-3
Datasheet
 Datasheet
EDA/CAD Models
IMZA65R057M1HXKSA1 Models
Product Attributes
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Category
Rds On (Max) @ Id, Vgs
74mOhm @ 16.7A, 18V
Mfr
Vgs(th) (Max) @ Id
5.7V @ 5mA
Series
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 18 V
Packaging
Tube
Vgs (Max)
+20V, -2V
Part Status
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds
930 pF @ 400 V
FET Type
Power Dissipation (Max)
133W (Tc)
Technology
Operating Temperature
-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
PG-TO247-4-3
Drive Voltage (Max Rds On, Min Rds On)
18V
Package / Case
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
In-Stock: 15
Check for Additional Incoming Stock
Not recommended for new design, minimums may apply
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1227,62000 Kč227,62 Kč
30133,02233 Kč3 990,67 Kč
120112,25708 Kč13 470,85 Kč
51097,04576 Kč49 493,34 Kč
1 02091,49858 Kč93 328,55 Kč
2 01086,92953 Kč174 728,36 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:227,62000 Kč
Unit Price with VAT:275,42020 Kč