Name: IMW120R014M1HXKSA1
Brand: Infineon Technologies
SKU: 448-IMW120R014M1HXKSA1-ND
Price: 873.8983 CZK
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMW120R014M1HXKSA1
DigiKey Part Number	448-IMW120R014M1HXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMW120R014M1HXKSA1
Description	SIC DISCRETE
Manufacturer Standard Lead Time	54 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 127A (Tc) 455W (Tc) Through Hole PG-TO247-3
Datasheet	Datasheet
EDA/CAD Models	IMW120R014M1HXKSA1 Models

Product Attributes

Filter Similar Products

Show Empty Attributes

Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Rds On (Max) @ Id, Vgs 18.4mOhm @ 54.3A, 18V
Mfr Infineon Technologies	Vgs(th) (Max) @ Id 5.2V @ 23.4mA
Series CoolSiC™	Gate Charge (Qg) (Max) @ Vgs 145 nC @ 18 V
Packaging Tube	Vgs (Max) +20V, -5V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 4580 pF @ 800 V
FET Type N-Channel	Power Dissipation (Max) 455W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 1200 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 127A (Tc)	Supplier Device Package PG-TO247-3
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V	Package / Case TO-247-3