Qorvo

QPD1004A 25 W GaN RF Input-Matched Transistor

Qorvo transistors are designed with 30 MHz to 1,200 MHz and 50 V GaN-on-SiC for wideband RF power applications

Image of The Qorvo QPD1004A is a discrete GaN-on-SiC HEMT designed for RF power applications requiring high efficiency and wideband performance. Operating from 30 MHz to 1,200 MHz, it delivers up to 40 W output power at 1 GHz with a typical power-added efficiency (PAE) of 73%. The device integrates an input matching network for 50 Ω impedance, simplifying design and reducing external component count.

Housed in a compact 6 mm × 5 mm leadless SMT package, the QPD1004A supports both continuous wave (CW) and pulsed operation. Its low-thermal-resistance package enhances reliability under demanding conditions, making it suitable for radar, communications, and test instrumentation systems.

Features
  • Frequency range: 30 MHz to 1,200 MHz
  • Output power (P3dB): 40 W at 1 GHz
  • Typical linear gain: 20.8 dB at 1 GHz
  • Typical PAE: 73% at 1 GHz
 
  • Operating voltage: 50 V
  • Input matched to 50 Ω
  • Low thermal resistance: 6 mm x 5 mm SMT package
  • Supports CW and pulsed operation
Applications
  • Military and civilian radar systems
  • Land mobile and military radio communications
  • Wideband and narrowband RF power amplifiers
 
  • Test and measurement instrumentation
  • Electronic countermeasure (EMC) and jamming systems

QPD1004A 25 W GaN RF Input-Matched Transistor

ImageManufacturer Part NumberDescriptionTechnologyConfigurationAvailable QuantityPriceView Details
25W, 30-1200 MHZ, GAN RF INPUT-MQPD1004ASR25W, 30-1200 MHZ, GAN RF INPUT-MGaN-0 - Immediate$3,970.87View Details
25W, 30-1200 MHZ, GAN RF INPUT-MQPD1004ATR725W, 30-1200 MHZ, GAN RF INPUT-MGaN-0 - Immediate$2,926.99View Details

Evaluation Board

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
EVAL BOARD FOR 25W, 30-1200 MHZ,QPD1004AEVBEVAL BOARD FOR 25W, 30-1200 MHZ,0 - Immediate$17,542.65View Details
Published: 2025-12-03