TO-263-3
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TO-263-3
TO-263-3

SIHB30N60E-GE3

DigiKey Part Number
SIHB30N60E-GE3-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHB30N60E-GE3
Description
MOSFET N-CH 600V 29A D2PAK
Manufacturer Standard Lead Time
25 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 29A (Tc) 250W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2600 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
250W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB30
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In-Stock: 515
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1131,91000 Kč131,91 Kč
5074,76840 Kč3 738,42 Kč
10073,60750 Kč7 360,75 Kč
50057,44912 Kč28 724,56 Kč
1 00056,69635 Kč56 696,35 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:131,91000 Kč
Unit Price with VAT:159,61110 Kč