N-Channel 600 V 9.2A (Tc) 170W (Tc) Through Hole TO-220AB
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IRFB9N60APBF

DigiKey Part Number
IRFB9N60APBF-ND
Manufacturer
Vishay Siliconix
Manufacturer Product Number
IRFB9N60APBF
Description
MOSFET N-CH 600V 9.2A TO220AB
Manufacturer Standard Lead Time
15 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 9.2A (Tc) 170W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
IRFB9N60APBF Models
Product Attributes
Type
Description
Select All
Category
Mfr
Vishay Siliconix
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
750mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRFB9N60
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In-Stock: 4 673
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
175,38000 Kč75,38 Kč
5038,06520 Kč1 903,26 Kč
10034,44090 Kč3 444,09 Kč
50028,08944 Kč14 044,72 Kč
1 00026,04886 Kč26 048,86 Kč
2 00024,59129 Kč49 182,58 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:75,38000 Kč
Unit Price with VAT:91,20980 Kč