TK125N60Z1,S1F
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TK125N60Z1,S1F
Toshiba 650 V and 1,200 V 3rd Generation Silicon Carbide MOSFETs | Datasheet Preview

TW107N65C,S1F

DigiKey Part Number
264-TW107N65CS1F-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TW107N65C,S1F
Description
G3 650V SIC-MOSFET TO-247 107MO
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 20A (Tc) 76W (Tc) Through Hole TO-247
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
145mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 18 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
76W (Tc)
Operating Temperature
175°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
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In-Stock: 30
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Quantity
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Tube
QuantityUnit PriceExt Price
1246,97000 Kč246,97 Kč
30180,68633 Kč5 420,59 Kč
120170,52942 Kč20 463,53 Kč
510124,62794 Kč63 560,25 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:246,97000 Kč
Unit Price with VAT:298,83370 Kč