Name: TRS4E65H,S1Q
Brand: Toshiba Semiconductor and Storage
SKU: 264-TRS4E65H,S1Q-ND
Price: 67.2155 CZK
Availability: InStock

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TRS4E65H,S1Q
DigiKey Part Number	264-TRS4E65H,S1Q-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TRS4E65H,S1Q
Description	DIODE SIL CARBIDE 650V 4A TO220L
Manufacturer Standard Lead Time	24 Weeks
Customer Reference
Detailed Description	Diode 650 V 4A Through Hole TO-220-2L
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Mfr	Toshiba Semiconductor and Storage
Series	-
Packaging	Tube
Part Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	4A
Voltage - Forward (Vf) (Max) @ If	1.35 V @ 4 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	55 µA @ 650 V
Capacitance @ Vr, F	263pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220-2L
Operating Temperature - Junction	175°C

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Tube