TRS6E65C,S1Q
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TRS12E65H,S1Q

DigiKey Part Number
264-TRS12E65H,S1Q-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TRS12E65H,S1Q
Description
DIODE SIL CARB 650V 12A TO220L
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
Diode 650 V 12A Through Hole TO-220-2L
Datasheet
 Datasheet
Product Attributes
Type
Description
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Category
Mfr
Toshiba Semiconductor and Storage
Series
-
Packaging
Tube
Part Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
12A
Voltage - Forward (Vf) (Max) @ If
1.35 V @ 12 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
120 µA @ 650 V
Capacitance @ Vr, F
778pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2L
Operating Temperature - Junction
175°C
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In-Stock: 345
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
158,88000 Kč58,88 Kč
5040,88380 Kč2 044,19 Kč
10040,74860 Kč4 074,86 Kč
50039,47938 Kč19 739,69 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:58,88000 Kč
Unit Price with VAT:71,24480 Kč