TK125N60Z1,S1F
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TK25N60X,S1F

DigiKey Part Number
TK25N60XS1F-ND
Manufacturer
Toshiba Semiconductor and Storage
Manufacturer Product Number
TK25N60X,S1F
Description
MOSFET N-CH 600V 25A TO247
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 600 V 25A (Ta) 180W (Tc) Through Hole TO-247
Datasheet
 Datasheet
EDA/CAD Models
TK25N60X,S1F Models
Product Attributes
Type
Description
Select All
Category
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV-H
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
180W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Base Product Number
TK25N60
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In-Stock: 26
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1125,67000 Kč125,67 Kč
3075,02633 Kč2 250,79 Kč
12073,40358 Kč8 808,43 Kč
51054,25143 Kč27 668,23 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:125,67000 Kč
Unit Price with VAT:152,06070 Kč