Name: GP2T080A120H
Brand: SemiQ
SKU: 1560-GP2T080A120H-ND
Price: 193.0676 CZK
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

GP2T080A120H
DigiKey Part Number	1560-GP2T080A120H-ND
Manufacturer	SemiQ
Manufacturer Product Number	GP2T080A120H
Description	SIC MOSFET 1200V 80M TO-247-4L
Manufacturer Standard Lead Time	22 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 35A (Tc) 188W (Tc) Through Hole TO-247-4
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	SemiQ
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1377 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	188W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247-4
Package / Case	TO-247-4
Base Product Number	GP2T080A