Name: BST70B2P4K01-VC
Brand: Rohm Semiconductor
SKU: 846-BST70B2P4K01-VC-ND
Price: 2506.7086 CZK
Availability: OutOfStock

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BST70B2P4K01-VC
DigiKey Part Number	846-BST70B2P4K01-VC-ND
Manufacturer	Rohm Semiconductor
Manufacturer Product Number	BST70B2P4K01-VC
Description	HSDIP20, 1200V, 70A, FULL-BRIDGE
Manufacturer Standard Lead Time	27 Weeks
Customer Reference
Detailed Description	Mosfet Array 1200V (1.2kV) 70A (Tc) 385W (Tc) Through Hole 20-HSDIP
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays	Vgs(th) (Max) @ Id 4.8V @ 22.2mA
Manufacturer Rohm Semiconductor	Gate Charge (Qg) (Max) @ Vgs 170nC @ 18V
Packaging Box	Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 800V
Part Status Active	Power - Max 385W (Tc)
Technology Silicon Carbide (SiC)	Operating Temperature -40°C ~ 175°C
Configuration 4 N-Channel (Full Bridge)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 1200V (1.2kV)	Package / Case 20-PowerDIP Module (1.508", 38.30mm)
Current - Continuous Drain (Id) @ 25°C 70A (Tc)	Supplier Device Package 20-HSDIP
Rds On (Max) @ Id, Vgs 25mOhm @ 70A, 18V