N-Channel 650 V 36A (Tc) 150W (Tc) Through Hole TO-247-3
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TP65H050WSQA

DigiKey Part Number
1707-TP65H050WSQA-ND
Manufacturer
Renesas Electronics Corporation
Manufacturer Product Number
TP65H050WSQA
Description
GANFET N-CH 650V 36A TO247-3
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 36A (Tc) 150W (Tc) Through Hole TO-247-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Renesas Electronics Corporation
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
TP65H050
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In-Stock: 5
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1446,00000 Kč446,00 Kč
30279,98733 Kč8 399,62 Kč
120243,69400 Kč29 243,28 Kč
510234,91492 Kč119 806,61 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:446,00000 Kč
Unit Price with VAT:539,66000 Kč