Name: NVH4L080N120SC1
Brand: onsemi
SKU: 5556-NVH4L080N120SC1-ND
Price: 299.9348 CZK
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

NVH4L080N120SC1
DigiKey Part Number	5556-NVH4L080N120SC1-ND
Manufacturer	onsemi
Manufacturer Product Number	NVH4L080N120SC1
Description	SICFET N-CH 1200V 29A TO247-4
Manufacturer Standard Lead Time	12 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 29A (Tc) 170W (Tc) Through Hole TO-247-4L
Datasheet	Datasheet
EDA/CAD Models	NVH4L080N120SC1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	onsemi
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 20 V
Vgs (Max)	+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds	1670 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	170W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4
Base Product Number	NVH4L080