N-Channel 1200 V 73A (Tc) 313W (Tc) Through Hole TO-247-3
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N-Channel 1200 V 73A (Tc) 313W (Tc) Through Hole TO-247-3
TO-247-3

NTHL030N120M3S

DigiKey Part Number
5556-NTHL030N120M3S-ND
Manufacturer
onsemi
Manufacturer Product Number
NTHL030N120M3S
Description
SILICON CARBIDE (SIC) MOSFET EL
Manufacturer Standard Lead Time
21 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 73A (Tc) 313W (Tc) Through Hole TO-247-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
39mOhm @ 30A, 18V
Vgs(th) (Max) @ Id
4.4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
107 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
2430 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
313W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
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In-Stock: 265
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1282,00000 Kč282,00 Kč
30170,16067 Kč5 104,82 Kč
120145,62992 Kč17 475,59 Kč
510130,09825 Kč66 350,11 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:282,00000 Kč
Unit Price with VAT:341,22000 Kč