Name: NTH4L060N090SC1
Brand: onsemi
SKU: 5556-NTH4L060N090SC1-ND
Price: 347.5725 CZK
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

NTH4L060N090SC1
DigiKey Part Number	5556-NTH4L060N090SC1-ND
Manufacturer	onsemi
Manufacturer Product Number	NTH4L060N090SC1
Description	SILICON CARBIDE MOSFET, NCHANNEL
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 900 V 46A (Tc) 221W (Tc) Through Hole TO-247-4L
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	onsemi
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Rds On (Max) @ Id, Vgs	43mOhm @ 20A, 18V
Vgs(th) (Max) @ Id	4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	87 nC @ 15 V
Vgs (Max)	+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds	1770 pF @ 450 V
FET Feature	-
Power Dissipation (Max)	221W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4