Name: NTH4L060N090SC1
Brand: onsemi
SKU: 5556-NTH4L060N090SC1-ND
Price: 376.2616 CZK
Availability: InStock

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NTH4L060N090SC1
DigiKey Part Number	5556-NTH4L060N090SC1-ND
Manufacturer	onsemi
Manufacturer Product Number	NTH4L060N090SC1
Description	SILICON CARBIDE MOSFET, NCHANNEL
Manufacturer Standard Lead Time	18 Weeks
Customer Reference
Detailed Description	N-Channel 900 V 46A (Tc) 221W (Tc) Through Hole TO-247-4L
Datasheet	Datasheet

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 4.3V @ 5mA
Mfr onsemi	Gate Charge (Qg) (Max) @ Vgs 87 nC @ 15 V
Packaging Tube	Vgs (Max) +22V, -8V
Part Status Active	Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 450 V
FET Type N-Channel	Power Dissipation (Max) 221W (Tc)
Technology SiCFET (Silicon Carbide)	Operating Temperature -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss) 900 V	Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 46A (Tc)	Supplier Device Package TO-247-4L
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V	Package / Case TO-247-4
Rds On (Max) @ Id, Vgs 43mOhm @ 20A, 18V