Name: NTH4L030N120M3S
Brand: onsemi
SKU: 5556-NTH4L030N120M3S-ND
Price: 334.9643 CZK
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

NTH4L030N120M3S
DigiKey Part Number	5556-NTH4L030N120M3S-ND
Manufacturer	onsemi
Manufacturer Product Number	NTH4L030N120M3S
Description	SILICON CARBIDE (SIC) MOSFET EL
Manufacturer Standard Lead Time	18 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 73A (Tc) 313W (Tc) Through Hole TO-247-4L
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	onsemi
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	39mOhm @ 30A, 18V
Vgs(th) (Max) @ Id	4.4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs	107 nC @ 18 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	2430 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	313W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4