TO-247-4 Top
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TO-247-4 Top
TO-247-4

G3F65MT12K

DigiKey Part Number
1913-G3F65MT12K-ND
Manufacturer
Navitas Semiconductor, Inc.
Manufacturer Product Number
G3F65MT12K
Description
1200V 65M TO-247-4 G3F SIC MOSFE
Manufacturer Standard Lead Time
20 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 35A (Tc) 153W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Navitas Semiconductor, Inc.
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
86mOhm @ 15A, 18V
Vgs(th) (Max) @ Id
4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1298 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
153W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
Product Questions and Answers

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In-Stock: 578
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1245,86000 Kč245,86 Kč
30147,36400 Kč4 420,92 Kč
120125,77550 Kč15 093,06 Kč
510118,66918 Kč60 521,28 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:245,86000 Kč
Unit Price with VAT:297,49060 Kč
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