MSJP20N65-BP is out of stock and can be placed on backorder.
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Parametric Equivalent


Goford Semiconductor
In Stock: 4 000
Unit Price: 26,91236 Kč
Datasheet

Parametric Equivalent


Goford Semiconductor
In Stock: 22
Unit Price: 79,78000 Kč
Datasheet
TO-220-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TO-220-3

MSJP20N65-BP

DigiKey Part Number
353-MSJP20N65-BP-ND
Manufacturer
Manufacturer Product Number
MSJP20N65-BP
Description
MOSFET N-CH TO220AB
Manufacturer Standard Lead Time
36 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 20A (Tc) 151W (Tc) Through Hole TO-220AB (H)
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1724 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
151W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220AB (H)
Package / Case
Base Product Number
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All prices are in CZK
Tube
QuantityUnit PriceExt Price
1119,36000 Kč119,36 Kč
5068,62660 Kč3 431,33 Kč
10063,28150 Kč6 328,15 Kč
50052,60784 Kč26 303,92 Kč
1 00051,22097 Kč51 220,97 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:119,36000 Kč
Unit Price with VAT:144,42560 Kč