N-Channel 250 V 100A (Tc) 600W (Tc) Through Hole TO-3P
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IXTQ100N25P

DigiKey Part Number
IXTQ100N25P-ND
Manufacturer
IXYS
Manufacturer Product Number
IXTQ100N25P
Description
MOSFET N-CH 250V 100A TO3P
Manufacturer Standard Lead Time
27 Weeks
Customer Reference
Detailed Description
N-Channel 250 V 100A (Tc) 600W (Tc) Through Hole TO-3P
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
Polar
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
24mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
185 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
600W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
IXTQ100
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In-Stock: 165
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1283,47000 Kč283,47 Kč
30172,14167 Kč5 164,25 Kč
120147,72617 Kč17 727,14 Kč
510143,03302 Kč72 946,84 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:283,47000 Kč
Unit Price with VAT:342,99870 Kč