N-Channel 1200 V 3A (Tc) 200W (Tc) Through Hole TO-220-3
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IXFP3N120

DigiKey Part Number
238-IXFP3N120-ND
Manufacturer
IXYS
Manufacturer Product Number
IXFP3N120
Description
MOSFET N-CH 1200V 3A TO220AB
Manufacturer Standard Lead Time
32 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 3A (Tc) 200W (Tc) Through Hole TO-220-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
IXYS
Series
HiPerFET™
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1050 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
IXFP3
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In-Stock: 320
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1201,24000 Kč201,24 Kč
50111,16500 Kč5 558,25 Kč
100102,49250 Kč10 249,25 Kč
50091,28586 Kč45 642,93 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:201,24000 Kč
Unit Price with VAT:243,50040 Kč