Name: IPT039N15N5ATMA1
Brand: Infineon Technologies
SKU: 448-IPT039N15N5ATMA1TR-ND
Price: 127.6429 CZK
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPT039N15N5ATMA1
DigiKey Part Number	448-IPT039N15N5ATMA1TR-ND - Tape & Reel (TR) 448-IPT039N15N5ATMA1CT-ND - Cut Tape (CT) 448-IPT039N15N5ATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPT039N15N5ATMA1
Description	OPTIMOS 5 POWER MOSFET
Manufacturer Standard Lead Time	26 Weeks
Customer Reference
Detailed Description	N-Channel 150 V 21A (Ta), 190A (Tc) 3.8W (Ta), 319W (Tc) Surface Mount PG-HSOF-8
Datasheet	Datasheet
EDA/CAD Models	IPT039N15N5ATMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	21A (Ta), 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Rds On (Max) @ Id, Vgs	3.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	4.6V @ 257µA
Gate Charge (Qg) (Max) @ Vgs	98 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7700 pF @ 75 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 319W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8
Package / Case	8-PowerSFN