N-Channel 600 V 21A (Tc) 192W (Tc) Through Hole PG-TO220-3
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IPP60R165CPXKSA1

DigiKey Part Number
448-IPP60R165CPXKSA1-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IPP60R165CPXKSA1
Description
MOSFET N-CH 600V 21A TO220-3
Customer Reference
Detailed Description
N-Channel 600 V 21A (Tc) 192W (Tc) Through Hole PG-TO220-3
Datasheet
 Datasheet
EDA/CAD Models
IPP60R165CPXKSA1 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
CoolMOS™
Packaging
Tube
Part Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
3.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
192W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Base Product Number
IPP60R165
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
198,69000 Kč98,69 Kč
5050,91600 Kč2 545,80 Kč
10046,30480 Kč4 630,48 Kč
50038,22812 Kč19 114,06 Kč
1 00035,63445 Kč35 634,45 Kč
2 00035,31601 Kč70 632,02 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:98,69000 Kč
Unit Price with VAT:119,41490 Kč