Diode 650 V 12A Through Hole PG-TO247-3
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Diode 650 V 12A Through Hole PG-TO247-3
PG-TO247-3

IDW12G65C5XKSA1

DigiKey Part Number
IDW12G65C5XKSA1-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IDW12G65C5XKSA1
Description
DIODE SIL CARB 650V 12A PGTO2473
Manufacturer Standard Lead Time
61 Weeks
Customer Reference
Detailed Description
Diode 650 V 12A Through Hole PG-TO247-3
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
CoolSiC™+
Packaging
Tube
Part Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
12A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 12 A
Speed
Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
190 µA @ 650 V
Capacitance @ Vr, F
360pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
IDW12G65
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In-Stock: 239
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1106,04000 Kč106,04 Kč
3059,31233 Kč1 779,37 Kč
12049,02508 Kč5 883,01 Kč
51041,47929 Kč21 154,44 Kč
1 02038,93565 Kč39 714,36 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:106,04000 Kč
Unit Price with VAT:128,30840 Kč