N-Channel 1200 V 65A (Tc) 278W (Tc) Through Hole TO-247-4
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DIF120SIC053

DigiKey Part Number
4878-DIF120SIC053-ND
Manufacturer
Diotec Semiconductor
Manufacturer Product Number
DIF120SIC053
Description
SICFET N-CH 1200V 65A TO-247-4
Manufacturer Standard Lead Time
9 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 65A (Tc) 278W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
EDA/CAD Models
DIF120SIC053 Models
Product Attributes
Type
Description
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Category
Mfr
Diotec Semiconductor
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
53mOhm @ 33A, 18V
Vgs(th) (Max) @ Id
4V @ 9.5mA
Gate Charge (Qg) (Max) @ Vgs
121 nC @ 15 V
Vgs (Max)
+18V, -4V
Input Capacitance (Ciss) (Max) @ Vds
2070 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
278W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
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In-Stock: 147
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
1250,09000 Kč250,09 Kč
30149,35167 Kč4 480,55 Kč
120127,24617 Kč15 269,54 Kč
510111,22641 Kč56 725,47 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:250,09000 Kč
Unit Price with VAT:302,60890 Kč