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DIF120SIC022

DigiKey Part Number
4878-DIF120SIC022-ND
Manufacturer
Diotec Semiconductor
Manufacturer Product Number
DIF120SIC022
Description
SIC MOSFET, TO-247-4L, N, 120A,
Manufacturer Standard Lead Time
9 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 120A (Tc) 340W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
EDA/CAD Models
DIF120SIC022 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Diotec Semiconductor
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
22.3mOhm @ 75A, 18V
Vgs(th) (Max) @ Id
4V @ 23.5mA
Gate Charge (Qg) (Max) @ Vgs
269 nC @ 18 V
Vgs (Max)
+18V, -4V
Input Capacitance (Ciss) (Max) @ Vds
4817 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
340W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
Product Questions and Answers

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In-Stock: 150
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Quantity
All prices are in CZK
Tube
QuantityUnit PriceExt Price
11 530,17000 Kč1 530,17 Kč
30992,06333 Kč29 761,90 Kč
120750,39900 Kč90 047,88 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:1 530,17000 Kč
Unit Price with VAT:1 851,50570 Kč
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