N-Channel 1200 V 37.2A (Tc) 208W (Tc) Through Hole TO-247-4
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N-Channel 1200 V 37.2A (Tc) 208W (Tc) Through Hole TO-247-4
TO-247-4L

DMWS120H100SM4

DigiKey Part Number
31-DMWS120H100SM4-ND
Manufacturer
Diodes Incorporated
Manufacturer Product Number
DMWS120H100SM4
Description
SIC MOSFET BVDSS: >1000V TO247-4
Manufacturer Standard Lead Time
40 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 37.2A (Tc) 208W (Tc) Through Hole TO-247-4
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Diodes Incorporated
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
37.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 15V
Vgs(th) (Max) @ Id
3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 15 V
Vgs (Max)
+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds
1516 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
208W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Package / Case
TO-247-4
Base Product Number
DMWS120
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In-Stock: 27
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Quantity
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Tube
QuantityUnit PriceExt Price
1468,26000 Kč468,26 Kč
30295,29500 Kč8 858,85 Kč
120257,46875 Kč30 896,25 Kč
510250,06271 Kč127 531,98 Kč
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
Unit Price without VAT:468,26000 Kč
Unit Price with VAT:566,59460 Kč