ProductHighlights

Isolated DC/DC Converters for IGBT, SiC & GaN

DC/DC converters for applications that require high Isolation up to 10kVDC

DC/DC converters are typically galvanically isolated between the input and outputs. This galvanic isolation have different construction and voltages. The simplest (functional) isolation can withstand 1000VDC for one second. Although 1000VDC sounds impressive, sometimes it is still not sufficient. Medical and IGBT, SiC MOSFET and GaN gate drivers demand higher isolation voltage. RECOM’s High Isolation converters offer up to 10 times the isolation voltage in compact packages.

RECOM’s converters for IGBT applications offer asymmetric outputs of +15 V and -9 V to replace two converters with one converter, thus saving board space. Converters with +20 V and -5V outputs are used for SiC MOSFETs and for the second generation of SiC MOSFETs, converters with +15 V and -3 V outputs have been developed. For GaN devices the portfolio was expanded to suit the +6 V that are required by GaN HEMT technology. For certain GaN applications, where higher noise and transients have to be accommodated into the design, RECOM also offers converters with +9 V output, which can be split via a Zener diode circuit to +6 V and -3 V to provide a negative switching gate voltage as well. All of RECOM’s converters for gate drivers offer high isolation, which is able to withstand the stress placed by the high switching rate. They are offered in various isolation voltages (up to 6.4 kV) and package sizes (SIP/DIP).

Features

  • High isolation up to 10 KVDC/1sec
  • High Efficiencies
  • Ultra-compact design
  • EN/UL certified
  • 3 years warranty

Applications

  • IGBT driver circuits
  • Motor control units
  • General purpose inverter
  • Uninterruptible power supplies
  • Welding machines

 

  • IGBT
  • SIC
  • GaN
  • Evaluation Board

High isolated DC/DC converters to extend the lifetime of IGBT drivers

IGBT controllers are used to convert DC voltage to AC voltage. These IGBT drivers switch at a fast rate, often at 10kHz or more, to maintain a high efficiency. Optocouplers act as an insulator for the control signal, but there is a need for an insulator on the power side. These DC/AC inverters are often floated at a few hundred volts. A typical isolation voltage would be at least twice the working voltage. Taking into account the high switching rates and high floating voltages, high isolated converters are needed to power these IGBT gate drivers. This will extend the lifetime and reliability of the DC/AC inverters.

 

Features

  • Asymmetric outputs +15V/-9V
  • Efficiency up to 86%
  • High grade isolation up to 6.4kVDC/1sec
  • Operating temperature range up to 90°C
  • EN certified
  • 3 year warranty

Applications

  • IGBT gate driver circuits
  • Motor control units
  • General purpose inverter
  • Uninterruptible power supplies
  • Welding machines

 

  Model Power VIN VOUT Isolation Cert. Case
Recom RH-xx1509D RH-xx1509D 1 W 5, 12, 24 +15V/-9 V 3 kVDC or 4 kVDC EN SIP7
Recom RP-xx1509D RP-xx1509D 1 W 5, 12, 24 +15V/-9 V 5.2 kVDC EN SIP7
Recom RxxP1509D RxxP1509D 1 W 5, 12, 24 +15V/-9 V 6.4 kVDC EN SIP7
Recom RKZ-xx1509D RKZ-xx1509D 2 W 5, 12, 24 +15V/-9V 3 kVDC or 4 kVDC EN SIP7
Recom RGZ-xx1509D RGZ-xx1509D 2 W 5, 12, 24 +15V/-9V 3 kVDC or 4 kVDC EN DIP14
Recom RV-xx1509D RV-xx1509D 2 W 5, 12, 24 +15V/-9 V 6 kVDC EN Mini DIP24
Recom RxxP21509D RxxP21509D 2 W 5, 12, 24 +15V/-9 V 6.4 kVDC EN SIP7

High Isolation Asymmetric Output DC/DC converters for SiC MOSFETs

To meet the tough requirements of the next generation of MOSFETs, RECOM has recently introduced two new 2W DC/DC converter series especially designed to power SiC MOSFETs. One of the challenges of driving SiC MOSFETs is the high frequency and high voltage at which they are switched. High potentials between the control and power side of a SiC MOSFET application can wear down isolation barriers, eventually causing them to fail.

RECOM’s DC/DC converter series for SiC MOSFETs come with 3 kVDC, 4 kVDC, 5.2 kVDC, and even 6.4 kVDC isolation to ensure that the isolation barrier stands up to even the harshest tests. Switching SiC MOSFETs requires turn-on and turn-off voltages which are not common for other IGBT or MOSFET applications. The RxxP22005D and RKZ-xx2005D series are available with input voltages of 5 V, 12 V, 15 V or 24 V and feature asymmetric outputs of +20 V and -5 V to efficiently and effectively switch the SiC MOSFET. To efficiently switch second generation SiC MOSFETs, the RxxP21503D series provides asymmetric output voltages of +15 and -3 V.

 

Features

  • Power Sharing
  • Asymmetric outputs +20/-05 VDC or +15/-03 VDC
  • Efficiency up to 87%
  • High Isolation up to 6.4 kVDC/1 second
  • Optional Continuous short circuit protection
  • Wide Operating Temperature Range from -40°C up to +90°C
  • UL60950 Certified, IEC/EN60950 Certified
  • 3 Year Warranty

Applications

  • DC/AC inverters
  • Renewable energy
  • Smart grid
  • Motor drives

 

  Model Power VIN VOUT Isolation Cert. Case
Recom RxxP21503D RxxP21503D 2 W 15, 12, 24 +15/-03 VDC 5.2 kVDC Certified EN-60950-1 SIP7
Recom RKZ-xx2005D RKZ-xx2005D 2 W 5, 12, 15, 24 +20/-05 VDC 3 kVDC or 4 kVDC UL60950-1 Certified
CSA C22.2 No. 60950-1-07
IEC/EN60950-1 Certified
EN55022
SIP7
Recom RxxP22005D RxxP22005D 2 W 5, 12, 15, 24 +20/-05 VDC 5.2 kVDC UL60950-1 Certified
CSA C22.2 No. 60950-1-03
IEC/EN60950-1 Certified
EN55022
SIP7

DC/DC supplies designed for fast-switching GaN drivers

The RP-xx06S and RxxP06S series offer an output voltage of +6 V which is sufficient to efficiently switch GaN HEMTs without causing a gate dielectric breakdown. The internal transformer design of these converters uses a pot-core to physically separate the input and output windings providing up to 6.4 kVDC isolation to ensure that the isolation barrier stands up to even the harshest operating conditions. Despite the high isolation grade, they still fit into an industry standard SIP7 case, thus saving valuable space on the circuit board.

These converters are available with input voltages of 5 V, 12 V, 15 V or 24 V and feature a low isolation capacitance (<10 pF). They are IEC/EN-60950-1 certified and fully compliant to RoHS2 and REACH. For certain GaN applications, where higher noise and transients have to be accommodated into the design, RECOM also offers converters with +9 V output, which can be split via a Zener diode circuit to +6 V and -3 V to provide a negative switching gate voltage as well.

 

Features

  • 6 V Output for GaN driver Applications
  • Up to 6.4 kVDC/sec Isolation in compact size
  • Low isolation capacitance (10 pF max.)
  • UL/IEC/EN62368-1, IEC/EN60950-1 certified (RxxP06S)
  • UL/IEC60950, IEC/EN60601-1 certified (RP-xx06S)

Applications

  • DC/AC inverters
  • Renewable energy
  • Smart grid
  • Motor drives

 

  Model Power VIN VOUT Isolation Cert. Case
Recom RP-xx06S RP-xx06S 1 W 5, 12, 15, 24 6 5.2 kV (5200 V) UL/IEC60950 Certified SIP7
Recom RxxP06S RxxP06S 1 W 5, 12, 15, 24 6 6.4 kV (6400 V) UL/IEC62368 Certified SIP7

Isolated DC/DC Converters for IGBT / SiC / GaN

The R-REF01-HB can be used to evaluate forward, flyback, buck, and boost topologies. The reference design consists of a half-bridge layout with a fully isolated driver stage using isolated power supplies for both the low-side and the high-side switching transistor types. The R-REF01-HB platform can be used to compare the real-life performance of various high power IGBT, 1st/2nd generation SiC, GaN, MOSFET and Cascode switching technologies.

Features

  • High-speed switching up to 1000V at up to 10A gate drive current
  • Half-bridge voltage up to 1kV
  • TTL-compatible signal input
  • Separate input for low and high-side switch for use with different topologies

Applications

  • IGBT, SiC, and GaN driver circuits
  • Motor control units
  • General purpose inverters
  • Uninterruptible power supplies
  • Welding machines