IXRFDSM607X2 RF MOSFET Gate Driver

IXYS RF's dual CMOS high-speed, high-current gate driver is specifically designed to drive MOSFETs

Image of IXYS RF IXRFDSM607X2 RF MOSFET Gate DriverIXYS RF's IXRFDSM607X2 is a dual CMOS high-speed, high-current gate driver specifically designed to drive MOSFETs in Class D and E HF RF applications as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths.

The IXRFDSM607X2 can source and sink 7 A of peak current per driver, 15 A when combined, while producing voltage rise and fall times of less than 5 ns and minimum pulse widths of 8 ns. The inputs of the driver are compatible with TTL or CMOS and are fully immune to latch up over the entire operating range.

Designed with small internal delays, cross conduction or current shoot-through is virtually eliminated. The features and wide safety margin in operating voltage and power make the IXRFDSM607X2 unmatched in performance and value.

Features
  • High peak output current
  • Low output impedance
  • Low quiescent supply current
  • Low propagation delay
  • High capacitive load drive capability
  • Wide operating voltage range
  • Capable of single or dual driver operation

IXRFDSM607X2 RF MOSFET Gate Driver

ImageManufacturer Part NumberDescriptionPart StatusAvailable QuantityView Details
IXRFDSM607X2 datasheet link15A LOW SIDE MOSFET DRIVER IN SMIXRFDSM607X215A LOW SIDE MOSFET DRIVER IN SMActive90 - Immediate
IXRFDSM607X2 product page link
Published: 2017-12-15