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SI4456DY-T1-E3 N-Channel 40V 33A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO
Price & Procurement
2 797 In Stock
Can ship immediately
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 2,35000 $2,35
10 2,11400 $21,14
25 1,99440 $49,86
100 1,55570 $155,57
250 1,51584 $378,96
500 1,31638 $658,19
1 000 1,11692 $1 116,92

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : SI4456DY-T1-E3TR-ND
  • Minimum Quantity: 2 500
  • Quantity Available: 2 500 - Immediate
  • Unit Price: $1,10096
  • Digi-Reel®  : SI4456DY-T1-E3DKR-ND
  • Minimum Quantity: 1
  • Quantity Available: 2 797 - Immediate
  • Unit Price: Digi-Reel®

SI4456DY-T1-E3

Datasheet
Digi-Key Part Number SI4456DY-T1-E3CT-ND
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Manufacturer

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Manufacturer Part Number SI4456DY-T1-E3
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Description MOSFET N-CH 40V 33A 8-SOIC
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Manufacturer Standard Lead Time 14 Weeks
Detailed Description

N-Channel 40V 33A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO

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Documents & Media
Datasheets SI4456DY
PCN Assembly/Origin Multiple Fabracation Changes09/Jul/2014
HTML Datasheet SI4456DY
Product Attributes
Type Description Select All
Categories
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 122nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5670pF @ 20V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Part Number SI4456
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package 1
Other Names SI4456DY-T1-E3CT