Single FETs, MOSFETs

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Power Dissipation (Max)
262W (Tc)262W
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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
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Power Dissipation (Max)
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TO-247N
SCT3030ALGC11
SICFET N-CH 650V 70A TO247N
Rohm Semiconductor
9 107
In Stock
1 : 697,60000 Kč
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ActiveN-ChannelSiCFET (Silicon Carbide)650 V70A (Tc)18V39mOhm @ 27A, 18V5.6V @ 13.3mA104 nC @ 18 V+22V, -4V1526 pF @ 500 V-262W (Tc)175°C (TJ)--Through HoleTO-247NTO-247-3
TO-247N
SCT3030ALHRC11
SICFET N-CH 650V 70A TO247N
Rohm Semiconductor
468
In Stock
1 : 1 195,06000 Kč
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ActiveN-ChannelSiCFET (Silicon Carbide)650 V70A (Tc)18V39mOhm @ 27A, 18V5.6V @ 13.3mA104 nC @ 18 V+22V, -4V1526 pF @ 500 V-262W175°C (TJ)AutomotiveAEC-Q101Through HoleTO-247NTO-247-3
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.