TO-220AB
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TO-220AB
TO-220AB

IRFBG30

Digi-Key Part Number
IRFBG30-ND
Manufacturer
Manufacturer Product Number
IRFBG30
Description
MOSFET N-CH 1000V 3.1A TO220AB
Detailed Description
N-Channel 1000 V 3.1A (Tc) 125W (Tc) Through Hole TO-220AB
Customer Reference
Datasheet Datasheet
Product Attributes
Type
Description
Select
Category
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
980 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
Environmental & Export Classifications
AttributeDescription
RoHS StatusRoHS non-compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095