3rd Generation Trench-Type SiC MOSFETs

ROHM's original design delivers high withstand voltage with low ON-resistance and fast switching speeds

Image of ROHM's 3rd Generation Trench-Type SiC MOSFETsROHM’s 3rd generation SiC MOSFETs utilize a proprietary trench gate structure that reduces ON-resistance by 50% and input capacitance by 35% compared with existing planar-type SiC MOSFETs. This translates to significantly lower switching loss and faster switching speeds, improving efficiency while reducing power loss in a variety of equipment.

Key Advantages

  • Lower ON-resistance improves inverter power density
  • Supports high-speed switching
  • Minimal reverse recovery behavior of the parasitic diode
  • Small Qg and parasitic capacitance
  • Eliminates degradation caused by parasitic diode conduction
  • Compatible with high-temperature operation (Tjmax=175°C)

3rd Generation Trench-Type SiC MOSFETs

ImageManufacturer Part NumberDescriptionAvailable QuantityView Details
SCT3120ALGC11 datasheet linkMOSFET NCH 650V 21A TO247NSCT3120ALGC11MOSFET NCH 650V 21A TO247N0SCT3120ALGC11 product page link
SCT3160KLGC11 datasheet linkMOSFET NCH 1.2KV 17A TO247NSCT3160KLGC11MOSFET NCH 1.2KV 17A TO247N0SCT3160KLGC11 product page link
SCT3060ALGC11 datasheet linkMOSFET NCH 650V 39A TO247NSCT3060ALGC11MOSFET NCH 650V 39A TO247N0SCT3060ALGC11 product page link
SCT3080KLGC11 datasheet linkMOSFET NCH 1.2KV 31A TO247NSCT3080KLGC11MOSFET NCH 1.2KV 31A TO247N2 - Immediate
SCT3080KLGC11 product page link
SCT3030ALGC11 datasheet linkMOSFET NCH 650V 70A TO247NSCT3030ALGC11MOSFET NCH 650V 70A TO247N0SCT3030ALGC11 product page link
SCT3040KLGC11 datasheet linkMOSFET NCH 1.2KV 55A TO247NSCT3040KLGC11MOSFET NCH 1.2KV 55A TO247N0SCT3040KLGC11 product page link
SCT3022ALGC11 datasheet linkMOSFET NCH 650V 93A TO247NSCT3022ALGC11MOSFET NCH 650V 93A TO247N0SCT3022ALGC11 product page link
SCT3030KLGC11 datasheet linkMOSFET NCH 1.2KV 72A TO247NSCT3030KLGC11MOSFET NCH 1.2KV 72A TO247N0SCT3030KLGC11 product page link
Published: 2016-08-15